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Figure 1: Hysteresis loop (a) and MOIF images of domain structure (b-h) taken during magnetization reversal of a single-crystal NiO/NiFe bilayer along the [110] unidirectional axis (b-e) and in the opposite direction (f-h). Figs. b to h correspond to conditions indicated by the circles labeled by the same letters on the hysteresis loop in Fig. 1a. Arrows indicate magnetization directions in domains.

Figure 2: (a, b) MOIF images of domain structure in a deformed unbiased epitaxial NiFe(001) film created during remagnetization along the [110] easy axis. H (applied field) = -2 Oe and +2 Oe in (a) and (b) respectively. Arrows indicate the magnetization directions in domains parallel and antiparallel to the applied field. (c, d) Domain structure in the deformed part of the epitaxial NiO/NiFe(001) bilayer during the [110] unidirectional-axis remagnetization (corresponds to the right-hand branch of the hysteresis loop in Fig. 1a). The arrow indicates the direction of the unidirectional axis and of the applied field. H = +24 Oe (c) and +28 Oe (d). (e) Surface steps associated with screw dislocation slip planes revealed in a reflected light at the NiFe surface in the NiO/NiFe bilayer. (f) Microstress fields caused by the slip planes of the edge dislocations revealed by the photoelasticity method.

Figure 3: Hysteresis loop (a) and domain structure (b-d) of the NiO/NiFe bilayer when it is remagnetized perpendicular to the [110] unidirectional axis. The applied field direction is indicated by the arrow.

Figure 4: Domain structure in a polycrystalline NiO/NiFe bilayer (a) and in a NiFe film (b) grown on Si. The magnetic field is applied along the unidirectional and easy axes, respectively, that are parallel to the vertical frame of the MOIF pattern.

next up previous Up: Title page Previous: References (Alison Chaiken)
Sat Feb 7 12:29:50 PST 1998