Requirements for Electron-Beam Phase-Change Media

  • Has low melting temperature, high glass transition temperature, good chemical stability

  • Has fast recrystallization at high temperatures but slow recrystallization at low temperatures

  • Has good morphology and low defect density when grown on Si

  • Forms low-leakage, high collection-efficiency diode

    • Early experiments with GeSbTe/Si diodes failed due to high leakage and low collection efficiency.

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