 
  
  
 
      
      
       Figure 1: a)
      Magnetization curves for two
      Fe(tFe)-Cu(61Å)-Co(55Å)- Cu(36Å)
      sandwiches grown at 160 °C. The curve indicated by
      squares is for a tFe = 40Å sandwich grown on
      silicon, and the solid line is for a tFe =
      16Å sandwich on glass. The plateau region in the
      tFe=40Å curve corresponds to the region
      where the Fe and Co moments are antialigned.
    
      
       b) Transverse (applied field perpendicular to current) MR
      traces for two
      Fe(tFe)-Cu(61Å)-Co(55Å)-Cu(36Å)
      sandwiches both grown on semi-insulating silicon. The
      tFe=40Å sample is the one whose
      magnetization curve is shown in a). The
      tFe=16Å sample was deposited at the same
      time as the tFe=16Å sample on glass whose
      data are shown in a). The MR data for the
      tFe=16Å sample are multiplied by a factor of
      10 for clarity. The MR is defined by Dr/r = [rmax
      - r(H=Hs)]/r(H=0).
    
      
       Figure 2:
      Spin-valve MR and anisotropic MR (AMR) versus Fe thickness
      for a series of 5
      Fe(tFe)-Cu(61Å)-Co(55Å)-Cu(36Å)
      sandwiches grown on silicon substrates at 160 ûC. The
      spin-valve MR is the isotropic component of the total MR. The
      dashed line is a fit to the AMR data with form AMR = 0.097% +
      (0.002%/Å)tFe.
    
      
      
       Figure 3:
      Spin-valve Dr and r values versus Fe thickness for the
      samples whose Dr/r is shown in Figure
      2. The thickness variation of the MR is clearly dominated
      by the change in Dr, the numerator of the expression,
      although the increase in r for low Fe (or Co) thicknesses
      also plays a role.