Session FB was held on Thursday afternoon and had as its topic magnetoresistance measurements on multilayer films. The session began with an invited talk by Eric Fullerton of Argonne National Laboratory, who reported on studies of Fe/Cr multilayers as a function of Cr thickness. The work of the ANL group has established that the spin-density wave present in bulk Cr is indeed present in Fe/Cr multilayers and that the effects of the SDW can be observed in both temperature-dependent resistance and neutron diffraction studies. Due to roughness at the Fe/Cr interfaces, the SDW may be frustrated, and novel domains structures may form in the Cr layer. The next several talks concerned transport behavior in Co/Cu multilayers. Yiming Huai, now at Read-Rite Corporation, described experiments at Lawrence Livermore National Laboratory where Co/Cu multilayers were grown on various different types of buffer layers. While GMR behavior of a multilayer grown on a Cu buffer layer was rather poor, the properties were greatly enhanced by the presence of a Co seed layer. M.J. Hall of Cambridge University discussed possible sources of irreproducibility in the GMR of Co/Cu films. He described the results of annealing studies which show that the GMR depends only on the remanence of the multilayers, demonstrating that it is the fraction of the film which is antialigned at low field that determines the size of the effect. Daniel Jardine, also of Cambridge, discussed what types of magnetic defects may be present in Co/Cu films with good structural perfection. Magnetic defects were studied by considering the difference between the virgin MR curve of a newly grown film and the smaller MR of a film that has been field-cycled. Hideyuki Kikuchi of Stanford University performed high-temperature anneals on Co/Cu films and observed the effect on the MR. He found that irreversibility in the magnetic properties sets in above about 150 C, with the high-field resistivity changing more than the low-field resistivity as the annealing temperature increased. The next two talks presented results on ion-beam sputtered (IBS) multilayers. Yasuyoshi Miyamoto of the Tokyo Institute of Technology described the effect of bombardment of the growing film by an ion-assist gun. He and his collaborators found that the best MR was obtained in permalloy/Cu multilayers with a 500V ion assist energy. Alex Hubert of Erlangen University desribed the results of an Erlangen/Siemens collaboration on IBS-sputtered Co/Cu and permalloy/Co/Cu multilayers. The researchers found the best MR occurred in films grown with xenon sputtering gas and at the maximum possible deposition rates. Yong-Jin Song of Seoul National University described magnetoresistance measurements on permalloy/Cu multilayers with a layer of Ni inserted in the middle of the permalloy. He described fabrication of the multilayer into a VCR head and reported that the performance of the device was well-described by an analytical model. Dexin Wang of Nonvolatile Electronics reported on an attempt to increase the magnetoresistance of a spin valve up to the level of that of a many-repeat multilayer. The idea is that a few-bilayer multilayer will have the same MR as an infinitely thick film if the boundaries are perfectly reflecting. An attempt was made to increase the specular reflectance of the spin-valve boundaries by using a Au cap and underlayer. Encouraging, although not definitive, results were reported. The final two talks of the session reported on attempts to model magnetoresistance in multilayers. E. Tsymbal of Oxford University reported on calculations of the magnetoresistance as a function of the energy of conduction electrons. The calculation was intended to describe hot electron effects in the magnetic metal-base transistors fabricated by the University of Twente, but may also describe voltage-biasing effects in AlOx-barrier tunnel junctions. Finally, O. Andrieu of Grenoble reported on simulations of magnetic behavior in discontinuous NiFe/Ag multilayers before and after annealing. The MR of these multilayers was anisotropic due to the sputtering geometry used during deposition.